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RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
REJ03G1496-0100 Rev.1.00 Jan 15, 2007
Features
* Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) * Low drive current * High speed switching * VDSS 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D
3 1 2
2 G
1. Source 2. Gate 3. Drain
S 1
Note:
Marking is "IG".
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 60 12 2 8 2 0.8 150 -55 to +150 Unit V V A A A W C C
Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Rev.1.00 Jan 15, 2007 page 1 of 7
RQK0604IGDQA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 +12 -12 -- -- -- 0.4 -- -- 3 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 111 129 6 320 38 20 12 35 36 3.7 3.4 0.6 1.0 0.8 Max -- -- -- +10 -10 1 1.4 144 180 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V V A A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +10 V, VDS = 0 VGS = -10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 4.5 V Note3 ID = 1 A, VGS = 2.5 V Note3 ID = 1 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 10 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note3
Rev.1.00 Jan 15, 2007 page 2 of 7
RQK0604IGDQA
Main Characteristics
Power vs. Temperature Derating
1 100
Test Condition : When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Maximum Safe Operation Area
Pch (W)
30
Drain Current ID (A)
0.8
10 3 1 0.3 0.1 0.03 0.01 0.003 Ta = 25C
1shot pulse Operation in this area is limited by RDS(on)
DC
10 s
PW
Op
1
10
Channel Dissipation
0.6
=
m
0
10
s
s
m
s
0.4
er
at
ion
0.2
0 0 25 50 75 100 125 150 175
0.001 0.01 0.03 0.1 0.3
1
3
10 30 100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 3V 5V 7, 10 V 1.8 V Pulse Test Tc = 25C 1.6 V 1.4 V 2.4 V 2.2 V 2V 10
Typical Transfer Characteristics (1)
VDS = 10 V Pulse Test
Drain Current ID (A)
6
Drain Current ID (A)
8
8
6
4
4 75C 2 25C Tc = -25C
2
VGS = 0 V
0 2 4 6 8 10 0 1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Typical Transfer Characteristics (2)
1 VDS = 10 V Pulse Test
Case Temperature
10
Drain Current ID (A)
0.1 0.01 Tc = 75C 0.001 25C 0.0001 -25C
ID = 10 mA 1 1 mA 0.1 mA VDS = 10 V Pulse Test 0 -25 0 25 50 75 100 125 150
0.00001 0 0.5 1 1.5 2
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
Rev.1.00 Jan 15, 2007 page 3 of 7
RQK0604IGDQA
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Voltage VDS(on) (mV)
500 Pulse Test Tc = 25C 400 300 2A 1.5 A 100 1A ID = 0.5 A 0 2 4 6 8 10
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
1000 Pulse Test Tc = 25C
2.5 V 100
4.5 V
200
VGS = 10 V
10 0.1
1
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature (1)
250
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (2)
Drain to Source on State Resistance RDS(on) (m)
250 Pulse Test VGS = 2.5 V 200 ID = 2 A 1.5 A
Drain to Source on State Resistance RDS(on) (m)
200
ID = 2 A 1.5 A
150 1A 100 0.5 A Pulse Test VGS = 4.5 V 0 25 50 75 100 125 150
150 0.5 A 100
1A
50 -25
50 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 Pulse Test VDS = 10 V 10 -25C
Zero Gate Voltage Drain current vs. Case Temperature
10000 Pulse Test VGS = 0 V VDS = 60 V
1000
1 Tc = 75C 0.1
25C
100
10
0.01 0.01
0.1
1
10
1 -25
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
Rev.1.00 Jan 15, 2007 page 4 of 7
RQK0604IGDQA
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
80
VDD = 10 V
Switching Characteristics
16 1000 VGS = 4.5 V, VDD = 10 V Rg = 4.7 , duty 1 % Tc = 25C 100 td(off) td(on) tr tf
60
25 V 50 V VGS
12
40
VDD = 50 V 25 V 10V
8
Switching Time t (ns)
10
20
ID = 2.0 A Tc = 25C
4
0
VDS 0 2 4 6 8
0 10
1 0.01
0.1
1
10
Gate Charge Qg (nc)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 700
VGS = 0 V f = 1 MHz
Input Capacitance vs. Gate to Source Voltage
Ciss1, Coss, Crss (pF)
Ciss
650
100
Ciss2 (pF)
Coss
600 550 500 450
VDS = 0 V f = 1 MHz
Crss 10 0 10 20 30 40 50 60
400 -10 -8 -6 -4 -2 0
2
4
6
8 10
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
10
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.7 VGS = 0 0.6 0.5 0.4 0.3 0.2 0.1 0 -25 1 mA ID = 10 mA
Reverse Drain Current IDR (A)
Pulse Test Tc = 25C 8 10 V 6 4.5 V 4 2.5 V VGS = -2.5 V, -4.5 V, -10 V VGS = 0 V 0 0.4 0.8 1.2 1.6 2.0
2
Body-Drain Diode Forward Voltage VSDF (V)
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Rev.1.00 Jan 15, 2007 page 5 of 7
RQK0604IGDQA
Switching Time Test Circuit Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDD = 10 V
90% td(on) tr
90% td(off) tf
Rev.1.00 Jan 15, 2007 page 6 of 7
RQK0604IGDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1 S b I1 c b2 A-A Section
e1
Pattern of terminal position areas
A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.4 0.16 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part No. RQK0604IGDQATL-E Quantity 3000 pcs. Shipping Container 178 mm reel, 8 mm Emboss taping
Rev.1.00 Jan 15, 2007 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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